Deposition kinetics of silicon dioxide from tetraethylorthosilicate by PECVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate
2. Reaction Mechanisms of Plasma‐ and Thermal‐Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films
3. Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films
4. Silicon oxide deposition from tetraethoxysilane in a radio frequency downstream reactor: Mechanisms and step coverage
5. High quality SiO2 depositions from TEOS by ECR plasma
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1. Low-energy N+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate, hexamethyldisiloxane, or hexamethyldigermane;AIP Advances;2024-09-01
2. Formation of SiO2 thin films through plasma- enhanced chemical vapor deposition using SiH4/Ar/N2O;Thin Solid Films;2024-05
3. Silicon oxide film formation by spraying tetraethyl orthosilicate onto substrate with simultaneous low-energy SiO+ ion-beam irradiation;AIP Advances;2023-11-01
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