A combined TEM and time-resolved optical reflectivity investigation into the excimer-laser crystallization of a-Si films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
2. Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films
3. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation
4. Explosive crystallization starting from an amorphous-silicon surface region during long pulsed-laser irradiation
5. On the Interpretation of Time-Resolved Surface Reflectivity Measurements during the Laser Annealing of Si Thin Films
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4. A novel optical diagnostic technique for analyzing the recrystallization characteristics of polycrystalline silicon thin films following frontside and backside excimer laser irradiation;Optics and Lasers in Engineering;2011-11
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