Rate-limiting process and growth kinetics of AlN thin films by microwave plasma CVD with AlBr3-NH3-N2 system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Intrinsic stress in A1N prepared by dual-ion-beam sputtering
2. Laser‐induced chemical vapor deposition of AlN films
3. Low-temperature epitaxial growth of AlN films on sapphire by electron cyclotron resonance plasma-assisted chemical vapor deposition
4. 〈0001〉-oriented growth of AlN films on Si(111) by microwave plasma CVD with AlBr3NH3N2 system
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1. Improving AlN crystalline quality by high-temperature ammonia-free microwave plasma chemical vapor deposition;Applied Physics Express;2021-04-20
2. Kinetic analysis of face-centered-cubic Ti1−Al N film deposition by chemical vapor deposition;Materials Science and Engineering: B;2021-02
3. Fabrication Condition Optimization of AIN Films and Its Nanometer Scale Piezoelectric Properties;Science of Advanced Materials;2018-03-01
4. Effects of laser power on the growth of polycrystalline AlN films by laser chemical vapor deposition method;Surface and Coatings Technology;2013-10
5. Effect of process conditions on the microstructural formation of dc reactively sputter deposited AlN;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-09
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