Chemical–mechanical polishing for giant magnetoresistance device integration-Reference-Cited by-同舟云学术

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Chemical–mechanical polishing for giant magnetoresistance device integration

Published:1998-11 Issue:1-2 Volume:332 Page:391-396
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hu Y.Z,Gutmann R.J,Chow T.P,Witcraft B

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Magnetoresistive memory technology

2. Design, simulation, and realization of solid state memory element using the weakly coupled GMR effect

3. Experimental and analytical properties of 0.2-μm-wide, end-on, multilayer, giant magnetoresistance, read head sensors

4. Magnetic tunneling applied to memory (invited)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Evaluation of Cleaning Solutions Enhanced with Tetraalkylammonium Hydroxide Substituents for Post-CMP Cleaning on Poly-Si Film;Journal of The Electrochemical Society;2002

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