Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties-Reference-Cited by-同舟云学术

Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties

Published:2001-07 Issue:1 Volume:392 Page:128-133
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ishikawa Katsuyuki,Watanabe Takayuki,Funakubo Hiroshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

2. Epitaxial Ferroelectric Aurivillius-Type Phases on Metallic Oxides by Pulsed Laser Deposition

3. M. Satyalaksmi, A. Pignolet, M. Alexe, N. D. Zakharov, C. Harnagea, S. Senz, S. Reichelt, D. Hesse, U. Gosele, In: R.E. Johnes, R.W. Schwartz, S. Summerfelt, I.K. Yoo (Eds.), Proc. Mater. Res. Soc., 541 (1997) 205.

4. Growth, crystallography and dielectric properties of Bi2WO6

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