A compact quantum surface potential model for a MOSFET device
Author:
Publisher
Elsevier BV
Subject
Computer Science Applications,Modelling and Simulation
Reference10 articles.
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5. M.G. Ancona, Z. Yu, W.C. Lee, R.W. Dutton, P.V. Voorde, Density-Gradient simulations of quantum effects in ultra-thin-oxide MOS structures, in: IEEE Proceedings. Simulation of Semiconductor Processes and Devices, International Conference, SISPAD’97, 1997, pp. 97–100
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1. A quantum correction based model for study of quantum confinement effects in nano-scale carbon nanotube field-effect transistor (CNTFET) under inversion condition;The European Physical Journal Applied Physics;2017-04
2. An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices;Transactions on Engineering Technologies;2014
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