An ANFIS Based Approach for Prediction of Threshold Voltage Degradation in Nanoscale DG MOSFET Devices
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-017-8832-8_25
Reference31 articles.
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1. Multi-objective Design of Nanoscale Double Gate MOSFET Devices Using Surrogate Modeling and Global Optimization;Intelligent Nanomaterials;2017-05-17
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