Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference22 articles.
1. Field-effect electroluminescence in silicon nanocrystals
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1. In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study;Surface Science;2012-04
2. Identification of defects at the interface between 3C-SiC quantum dots and a SiO2 embedding matrix;physica status solidi (b);2011-12-23
3. Annealing simulations to determine the matrix interface structure of SiC quantum dots embedded in SiO2;physica status solidi (c);2010-02
4. Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO2/Si interface by CO annealing;Journal of Applied Physics;2009-07-15
5. An O18 study of the interaction between carbon monoxide and dry thermal SiO2 at 1100 °C;Journal of Applied Physics;2009-02
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