Thermal-induced intermixing effects on the optical properties of long wavelength low density InAs/GaAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference22 articles.
1. Low threshold, large To injection laser emission from (InGa)As quantum dots
2. Ultralow threshold laser using a single quantum dot and a microsphere cavity
3. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m
4. Quantum functional devices for advanced electronics
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Tailoring Energy Band Alignment of Vertically Aligned InGaAs Quantum Dots Capped with GaAs(Sb)/AlGaAsSb Composite Structure after Thermal Annealing Treatment;ACS Photonics;2017-02-03
2. Energy band structure tailoring of vertically aligned InAs/GaAsSb quantum dot structure for intermediate-band solar cell application by thermal annealing process;Optics Express;2014-12-05
3. Self-Assembled InAs/AlAs Quantum Dots Characterization Using Photoreflectance Spectroscopy;Journal of the Korean Vacuum Society;2009-05-30
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