Growth mode transitions induced by hydrogen-assisted MBE on vicinal GaAs(110)
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference15 articles.
1. Temperature-dependent unstable homoepitaxy on vicinal GaAs(110) surfaces
2. Morphological instabilities during homoepitaxy on vicinal GaAs(110) surfaces
3. Growth modes in homoepitaxy on vicinal GaAs(110) surfaces
4. Morphological instability of a terrace edge during step-flow growth
5. Surface-morphology evolution during unstable homoepitaxial growth of GaAs(110)
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1. Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates;Nanotechnology;2017-12-18
2. Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2014-10
3. Modified energetics and growth kinetics on H-terminated GaAs (110);The Journal of Chemical Physics;2013-10-28
4. Step-step interactions on GaAs (110) nanopatterns;Journal of Applied Physics;2013-01-14
5. InGaAs/GaAs (110) quantum dot formation via step meandering;Journal of Applied Physics;2011-07
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