Temperature-dependent unstable homoepitaxy on vicinal GaAs(110) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates
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4. Step‐flow growth on strained surfaces: (Al,Ga)Sb tilted superlattices
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1. Revisiting step instabilities on crystal surfaces. Part II: General theory;Journal of the Mechanics and Physics of Solids;2021-11
2. Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110);Journal of Alloys and Compounds;2021-09
3. Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy;Crystal Growth & Design;2021-06-10
4. Impact of nucleation on step-meandering instabilities during step-flow growth on vicinal surfaces;Physical Review E;2014-03-20
5. Step-step interactions on GaAs (110) nanopatterns;Journal of Applied Physics;2013-01-14
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