Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96665
Reference18 articles.
1. Improvements in MBE Grown AlxGa1-xAs/GaAs Single Quantum Well Structures Resulting from Dimeric Arsenic
2. Improved GaAs/AlGaAs single quantum wells through the use of thin superlattice buffers
3. Extrinsic layer at AlxGa1−xAs‐GaAs interfaces
4. Extrinsic photoluminescence from GaAs quantum wells
5. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy
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1. Sub-meV photoluminescence linewidth and >106cm2∕Vs electron mobility in AlGaAs∕GaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates;Journal of Applied Physics;2006-05
2. Temperature-dependent unstable homoepitaxy on vicinal GaAs(110) surfaces;Surface Science;1998-06
3. Substrate Misorientation Effects on Epitaxial GaInAsSb;MRS Proceedings;1997
4. Photoreflectance and Photoluminescence Characterization of GaAs Quantum Wells Grown by Molecular Beam Epitaxy on Flat and Misoriented Substrates;Japanese Journal of Applied Physics;1996-07-15
5. Experimental and computer simulation studies of the surface morphology of Hg1−xMnxTe epitaxial layers grown by metalorganic vapour phase epitaxy;Journal of Crystal Growth;1994-05
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