Structural and optical properties modification of a-SiC:H by Ga+ ion implantation-Reference-Cited by-同舟云学术

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Structural and optical properties modification of a-SiC:H by Ga+ ion implantation

Published:2003-03 Issue:2-3 Volume:70 Page:467-470
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Tsvetkova T,Angelov O,Sendova-Vassileva M,Dimova-Malinovska D,Bischoff L,Adriaenssens G.J,Grudzinski W,Zuk J

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference12 articles.

1. SiC thin-film thermistor

2. Development of a high-brightness gas field-ionization source

3. Bischoff L, Teichert J, Kitova S, Tsvetkova T. Vacuum 2002, in preparation.

4. Liquid metal ion sources and their applications

5. High‐resolution focused ion beams

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1. Nanoscale Optical Patterning of Amorphous Silicon Carbide for High-Density Data Archiving;Multilayer Thin Films - Versatile Applications for Materials Engineering;2020-01-15

2. Ion Beams for Nanoscale Optical Data Storage;Ion Beam Applications;2018-07-18

3. Surface characterisation of Ga+ion implanted ta-C thin films;Journal of Physics: Conference Series;2017-01

4. Structural modification of Ga+and N+ion implanted ta-C films;Journal of Physics: Conference Series;2016-03

5. Optical Properties of Amorphous Silicon–Carbon Alloys (a-Si x C1-x ) Deposited by RF Co-Sputtering;Arabian Journal for Science and Engineering;2014-04-22

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