Effect of sputtering gas pressure and nitrogen concentration on crystal orientation and residual stress in sputtered AlN films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference21 articles.
1. Low‐temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering
2. VACUUM DEPOSITION OF AlN ACOUSTIC TRANSDUCERS
3. rf‐sputtered aluminum nitride films on sapphire
4. Aluminum nitride films by rf reactive ion‐plating
5. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films
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