A SiCl4 reactive ion etching and laser reflectometry process for HBT fabrication-Reference-Cited by-同舟云学术

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A SiCl4 reactive ion etching and laser reflectometry process for HBT fabrication

Published:1996-11 Issue:11 Volume:47 Page:1347-1351
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Granier H,Tasselli J,Marty A,Hu Hiep Pham

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference9 articles.

1. Int Symp GaAs and Related Comp;Lester,1993

2. A new self-alignment technology using bridged base electrode for small-scaled AlGaAs/GaAs HBT's

3. Reactive Ion Etching: its basis and future;Bollinger;Solid State Technol,1984

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1. Terahertz Barcodes Enabled by All‐Silicon Metasurfaces for Process Control and Monitoring Applications;Advanced Materials Technologies;2023-02-03

2. Atomic layer sensitive in-situ plasma etch depth control with reflectance anisotropy spectroscopy (RAS);Optical Measurement Systems for Industrial Inspection X;2017-06-26

3. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment;Beilstein Journal of Nanotechnology;2016-11-21

4. Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring;Applied Surface Science;2015-12

5. Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment;Applied Surface Science;2015-02

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