Structure of double interfaces system of Si3N4/SiO2/Si irradiated by γ-rays
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference18 articles.
1. Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas
2. Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics
3. Improvement of punchthrough‐induced gate‐oxide breakdown inn‐channel metal‐oxide‐semiconductor field‐effect transistors using rapid thermal nitridation
4. Improved hot-carrier immunity in CMOS analog device with N/sub 2/O-nitrided gate oxides
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1. Quantitative study the effect of 60Co on S3N4/SO2/Si capacitors via capacitance-voltage model;Radiation Physics and Chemistry;2023-11
2. Gamma-ray irradiation-induced oxidation and disproportionation at the amorphous SiO2/Si interfaces;Journal of Materials Chemistry C;2020
3. Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation;Journal of Electronic Testing;2017-02-13
4. Effect of nitrogen content in amorphous SiCxNyOz thin films deposited by low temperature reactive magnetron co-sputtering technique;Surface and Coatings Technology;2011-12
5. Study of Si3N4/SiO2/Si and SiO2/Si3N4/Si Multilayers by O and N K-Edge X-ray Absorption Spectroscopy;Japanese Journal of Applied Physics;2010-08-20
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