The effects of deposition parameters on the crystallographic orientation of AIN films prepared by RF reactive sputtering
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference7 articles.
1. Reactive molecular beam epitaxy of aluminium nitride
2. Low-Temperature Synthesis of Aluminium Nitride Film by HCD-Type Ion Plating
3. A comparison of NF3 and NH3 as the nitrogen sources for AIN crystal growth by metalorganic chemical vapor deposition
4. Laser Deposition of AlN Thin Films on InP and GaAs
5. Preparation ofc-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering
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1. AlN Sputtering Parameter Estimation Using A Multichannel Parallel DCT Neural Network;2024 IEEE 42nd VLSI Test Symposium (VTS);2024-04-22
2. Effect of RF power on AlN film crystallinity in low pressure range using Ar-20%N2 gases by magnetic mirror-type magnetron cathode;Japanese Journal of Applied Physics;2022-03-16
3. Fabrication and Simulation of Piezoelectric Aluminium Nitride Based Micro Electro Mechanical System Acoustic Sensor;Journal of Nanoelectronics and Optoelectronics;2019-09-01
4. ($ \begin{array}{ccc}1& 0& \begin{array}{cc}\bar{1}& 1\end{array}\end{array}$) preferential orientation of polycrystalline AlN grown on SiO2/Si wafers by reactive sputter magnetron technique;The European Physical Journal Applied Physics;2016-04
5. Low Vacuum Deposition of Aluminum Nitride Thin Films by Sputtering;International Journal of Applied Ceramic Technology;2012-06-11
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