Leakage currents and conduction mechanisms of Ta2O5 layers on Si obtained by RF sputtering
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference9 articles.
1. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs
2. Nondestructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5
3. Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMs
4. Thermally robust Ta/sub 2/O/sub 5/ capacitor for the 256-Mbit DRAM
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