Heterogeneous kinetics and mass transport in chemical vapour deposition processes-Reference-Cited by-同舟云学术

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Heterogeneous kinetics and mass transport in chemical vapour deposition processes

Published:1981-01 Issue:3 Volume:4 Page:249-281
ISSN:0146-3535
Container-title:Progress in Crystal Growth and Characterization
language:en
Short-container-title:Progress in Crystal Growth and Characterization

Author:

Hitchman Michael L.

Publisher

Elsevier BV

Subject

General Engineering

Reference40 articles.

1. Mechanisms in vapour epitaxy of semiconductors;Shaw,1974

2. Polysilicon growth kinetics in a low pressure chemical vapour deposition reactor

3. Kinetics and mechanism of low pressure CVD of polysilicon;Hitchman,1979

4. M.L. Hitchman and J. Kane, J. Crystal Growth, submitted for publication.

5. M.L. Hitchman and A.E. Widmer, J. Crystal Growth, submitted for publication.

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2. Chemical vapour deposition of coatings;Progress in Materials Science;2003

3. Kinetics of the Iodide Titanium Process by the Thermal Decomposition of Titanium Tetraiodide;Journal of The Electrochemical Society;2000

4. Some Kinetic Considerations of Chemical Vapour Deposition (CVD) Processes;Applications of Kinetic Modelling;1999

5. Study of the Factors Affecting Mass Transport in Electrochemical Gas Sensors;The Analyst;1997

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