Polishing performance and material removal mechanism in the solid-phase Fenton reaction based polishing process of SiC wafer using diamond gel disc-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Polishing performance and material removal mechanism in the solid-phase Fenton reaction based polishing process of SiC wafer using diamond gel disc

Published:2024-09 Issue: Volume:330 Page:118486
ISSN:0924-0136
Container-title:Journal of Materials Processing Technology
language:en
Short-container-title:Journal of Materials Processing Technology

Author:

Xu Lanxing,Feng Kaiping,Zhao Liang,Gu Yanzhang,Zhao Tianchen,Lyu Binghai

Publisher

Elsevier BV

Reference30 articles.

1. Mechanisms of tool-workpiece interaction in ultraprecision diamond turning of single-crystal SiC for curved microstructures;Huang;Int. J. Mach. Tool. Man.,2023

2. Syntaxy and defect distribution during the bulk growth of 4H-SiC Single crystal;Patel;J. Mater. Sci. -Mater. el.,2021

3. Development of high power SiC devices for rail traction power systems;Liu;J. Cryst. Growth,2019

4. EDM mechanism of single crystal SiC with respect to thermal, mechanical and chemical aspects;Zhao;J. Mater. Process. Tech.,2016

5. Chemical-mechanical polishing of 4h silicon carbide wafers;Wang;Adv. Mater. Interfaces,2023

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machining performance and material removal mechanism of sapphire with novel polishing slurry;Applied Surface Science;2024-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP