Monte-Carlo simulation on growth patterns of DAS structure on quenched Si(111) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference26 articles.
1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
2. Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction
3. Some New Techniques in Reflection High Energy Electron Diffraction (RHEED) Application to Surface Structure Studies
4. The Si(111) 7 × 7 TO “1 × 1” transition
5. Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfaces
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dynamical Monte Carlo simulation on response of DAS domain in quenched Si(111) surface;Surface Science;2005-08
2. Stabilization mechanism of Si(111) 7×7 domain growth: important role of shared corner-holes;Surface Science;2001-09
3. Scanning tunneling microscope study of dynamic phenomena on clean Si(111) surfaces: Si magic clusters and their role;Journal of Physics and Chemistry of Solids;2001-09
4. Scanning Tunneling Microscopy Observation of the Formation of the Smallest Dimer–Adatom–Stacking-fault Domain on a Quenched Si(111) Surface;Japanese Journal of Applied Physics;2000-07-30
5. Effect of Steps on Structural Phase Transitions of Si(111) 7×7 Surfaces;Japanese Journal of Applied Physics;2000-07-30
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