Scanning Tunneling Microscopy Observation of the Formation of the Smallest Dimer–Adatom–Stacking-fault Domain on a Quenched Si(111) Surface-Reference-Cited by-同舟云学术

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Scanning Tunneling Microscopy Observation of the Formation of the Smallest Dimer–Adatom–Stacking-fault Domain on a Quenched Si(111) Surface

Published:2000-07-30 Issue:Part 1, No. 7B Volume:39 Page:4408-4411
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimada Wataru,Tochihara Hiroshi,Sato Tomoshige,Iwatsuki Masashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microscopic mechanism of the homoepitaxy onSi(111)7×7;Physical Review B;2016-07-05

2. Morphological evidence for surface pre-melting on Si(111);Surface Science;2007-12

3. Regular arrangement of nanometre-scale clusters by surface strain on stabilized Cl/Si(111);Journal of Physics: Condensed Matter;2007-02-13

4. The effects of monovacancies on the terrace width during sublimation from the (111) surface of a diamond-like crystal;Semiconductors;2003-06

5. Formation mechanism of the Si(111)7×7 reconstruction studied by scanning tunneling microscopy: Zipper-like restructuring in the sequential size changes of isolated single faulted-halves;Surface Science;2003-03

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