An ion beam technique for real-time measurement of two-dimensional islands during epitaxial growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Two-component simulation for molecular beam epitaxy growth of GaAs;Physical Review B;2003-02-06
2. Specular ion current measurements as a quantitative, real-time probe of GaAs(001) epitaxial growth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
3. Probing the growth, structure, and magnetism of epitaxial films by grazing scattering of fast ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-08
4. Glancing-Angle Ion Enhanced Surface Diffusion on GaAs(001) during Molecular Beam Epitaxy;Physical Review Letters;2001-01-08
5. Real-time study of nucleation, growth, and ripening during Fe/Fe(100) homoepitaxy using ion scattering;Physical Review B;2000-07-15
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