Two-component simulation for molecular beam epitaxy growth of GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.075305/fulltext
Reference23 articles.
1. Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam Epitaxy
2. Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach
3. A new universality class for kinetic growth: One-dimensional molecular-beam epitaxy
4. Stable and unstable growth in molecular beam epitaxy
5. Simulation of GaAs growth and surface recovery with respect to galliumand arsenic surface kinetics
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