Adsorption of t-butylphosphine (TBP) on GaP(001)-(2×4) and the surface structure studied by HREELS and STM
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. The compositional and structural changes that accompany the thermal annealing of (100) surfaces of GaAs, InP and GaP in vacuum
2. The GaP(001) surface and the adsorption of Cs
3. Surface optical phonons and hydrogen chemisorption on polar and nonpolar faces of GaAs, InP, and GaP
4. Surface structure of (100) GaP grown by gas source molecular beam epitaxy
5. Surface Reconstruction of GaP (001) for Various Surface Stoichiometries
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First-principles study of GaP(001) surfaces;Journal of Alloys and Compounds;2007-08
2. Decomposition of trisdimethylaminoarsenic and As nucleation on GaAs(001)-2×4 at low temperature;Applied Physics Letters;2002-07
3. Adsorption and decomposition of t-butylphosphine (TBP) on a GaP(0 0 1)-(2 × 1) surface studied by LEED, HREELS, and TPD;Applied Surface Science;2001-05
4. Fabrication of a P-stabilized GaP(001)-(2×1) surface at very low pressure studied by LEED, STM, AES, and RHEED;Journal of Crystal Growth;2000-12
5. Scanning tunneling microscopy study of organometallic molecules adsorbed on a GaAs(001)-2×4 surface;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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