Surface reactions of trimethylgallium on MOVPE-grown GaN(0001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range;Technical Physics Letters;2023-12
2. Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction;Coatings;2022-10-19
3. Preparation and properties of heteroepitaxial β-Ga2O3 films on KTaO3 (100) substrates by MOCVD;Materials Characterization;2020-07
4. Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties;Semiconductor Science and Technology;2020-04-03
5. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09
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