Photoluminescence investigation of short period silicon–germanium heterostructures grown using molecular beam epitaxy-Reference-Cited by-同舟云学术

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Photoluminescence investigation of short period silicon–germanium heterostructures grown using molecular beam epitaxy

Published:1999-08 Issue:1-2 Volume:437 Page:145-153
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Pinto N.,Tombolini F.,Murri R.,De Crescenzi M.,Casalboni M.,Barucca G.,Majni G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference29 articles.

1. Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

2. Photoluminescence and electroluminescence of SiGe dots fabricated by island growth

3. Photoluminescence study of the crossover from two‐dimensional to three‐dimensional growth for Ge on Si(100)

4. Diffusion Constant of a Polymer Chain in Biomembranes

5. Absence of Stark shift in strained Si1−xGex/Si type‐I quantum wells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling;Physical Review B;2016-12-08

2. Structural and photoluminescence properties of Ge Si ultra-thin films and heterostructures;Journal of Physics: Condensed Matter;2002-08-22

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