EELS peak intensity dependence on primary electron energy for the Si(111)7×7 and Si(111)-Cr surface structures-Reference-Cited by-同舟云学术

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EELS peak intensity dependence on primary electron energy for the Si(111)7×7 and Si(111)-Cr surface structures

Published:1999-05 Issue:1 Volume:426 Page:38-47
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Plusnin N.I.,Soldatov V.Y.,Milenin A.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference24 articles.

1. Elastic and inelastic backscattering of slow electrons from silicon

2. ELS study on the initial stage of Ti-silicide formation on Si(1 1 1) at room temperature

3. Electronic structure of the (0001) and (101̄0) quartz surfaces and of their defects as observed by reflection electron energy loss spectroscopy (REELS)

4. Low energy electron-beam-enhanced formation of ultrathin insulating silicon oxynitride layers on Si(100) at moderate temperatures: in situ determination of the band gap energy using electron energy loss spectroscopy

5. FORMATION OF INTERFACES AND TEMPLATES IN THE Si(111)-Cr SYSTEM

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of AES and EELS for surface/interface characterization;Journal of Electron Spectroscopy and Related Phenomena;2004-07

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