Silicon epitaxy on hydrogen-terminated Si(001) surfaces using thermal and energetic beams
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference27 articles.
1. Kinetics of ordered growth of Si on Si(100) at low temperatures
2. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
3. Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon
4. Very low temperature (<400 °C) silicon molecular beam epitaxy: The role of low energy ion irradiation
5. Low‐temperature homoepitaxy on Si(111)
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1. The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperature – An electron microscopic study;Journal of Non-Crystalline Solids;2007-08
2. Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation;Surface Science;2006-10
3. Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces;Physical Review B;2004-09-15
4. Low-temperature silicon homoepitaxial growth by pulsed magnetron sputtering;Applied Surface Science;2004-04
5. Molecular Dynamics Simulation of the Interactions of H Radicals with a Hydrogenated Si(001) Surface;Japanese Journal of Applied Physics;2002-03-15
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