Adsorption sites at Cs nanowires grown on the InAs(110) surface-Reference-Cited by-同舟云学术

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Adsorption sites at Cs nanowires grown on the InAs(110) surface

Published:2001-04 Issue:1 Volume:477 Page:35-42
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Betti Maria Grazia,Corradini V.,Bertoni G.,Gardonio Sandra,Mariani Carlo,Gavioli L.,Belkhou R.,Taleb-Ibrahimi A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference53 articles.

1. Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metals

2. Structure of Cs on GaAs(110) as determined by scanning tunneling microscopy

3. Insulating Cs overlayer on InSb(110)

4. A scanning tunneling microscopy study of clean and Cs-covered InSb(110)

5. Evolution of one-dimensional Cs chains on InAs(110) as determined by scanning-tunneling microscopy and core-level spectroscopy

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of electron accumulation at InN(0001) surfaces via saturation of surface states by potassium and oxygen as donor- or acceptor-type adsorbates;Journal of Applied Physics;2014-01-28

2. Generic guiding principle for the prediction of metal-induced reconstructions of compound semiconductor surfaces;Physical Review B;2008-08-06

3. Structural and electronic properties of theK∕GaAs(110)surface;Physical Review B;2008-02-27

4. Quasi–one-dimensional electronic state of alkali metal chains assembled on the InAs(110) surface;Europhysics Letters (EPL);2004-10

5. Atomic geometry and theoretical scanning tunneling microscopy images of K chains on InAs(110);Applied Surface Science;2004-10

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