Reduction of electron accumulation at InN(0001) surfaces via saturation of surface states by potassium and oxygen as donor- or acceptor-type adsorbates
Author:
Funder
DFG
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863117
Reference82 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
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3. Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
4. Low-field electron mobility in wurtzite InN
5. Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy
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1. Photoelectron spectroscopy of electronic surface structure of the Cs/GaN and Cs/InN interfaces;Surface and Interface Analysis;2020-05-03
2. Role of adsorbed water in inducing electron accumulation in InN;Journal of Applied Physics;2019-12-14
3. Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN;Journal of Applied Physics;2019-07-28
4. Effects of Potassium Adsorption and Potassium–Water Coadsorption on the Chemical and Electronic Properties of n-Type GaN(0001) Surfaces;The Journal of Physical Chemistry C;2018-02-19
5. Soft X-ray photoelectron spectroscopy of the ultrathin Ba/InGaN interface;Applied Surface Science;2017-11
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