Quantum chemical study on SiO desorption from a Si(111) surface-Reference-Cited by-同舟云学术

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Quantum chemical study on SiO desorption from a Si(111) surface

Published:1997-10 Issue:1-3 Volume:387 Page:59-68
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Endou Akira,Stirling Andras,Yamauchi Ryo,Broclawik Ewa,Kubo Momoji,Miyamoto Akira,Nakamura Kazutaka G.,Kitajima Masahiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference36 articles.

1. Insitumeasurements of SiO(g) production during dry oxidation of crystalline silicon

2. The interaction of molecular and atomic oxygen with Si(100) and Si(111)

3. Models for the oxidation of silicon

4. Real‐time observation of ultrathin silicon oxide film growth using rapid ellipsometry

5. Oxidation of the Si(111) (7×7) surface: Electron energy loss spectroscopy, low‐energy electron diffraction, and Auger electron spectroscopy studies

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-09

2. Active oxidation: Silicon etching and oxide decomposition basic mechanisms using density functional theory;Surface Science;2007-05

3. Observation of single oxygen atoms decomposed from water molecules on aSi(111)−7×7surface;Physical Review B;2006-02-21

4. Complete dissociation of water on hot silicon ()–7×7 surface––direct observation of hopping oxygen atom;Surface Science;2003-04

5. Desorption of SiO molecule from the Si(100) surface;Surface Science;2001-03

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