Insitumeasurements of SiO(g) production during dry oxidation of crystalline silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100105
Reference12 articles.
1. Real-time study of oxygen reaction on Si(100)
2. On the vacancy formation and diffusion on the Si(111)7×7 surfaces under exposures of low oxygen pressure studied by in situ reflection electron microscopy
3. Models for the oxidation of silicon
4. General Relationship for the Thermal Oxidation of Silicon
5. Parallel Oxidation Mechanism for Si Oxidation in Dry O 2
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