Oxidation of AlAs films under ultrahigh vacuum conditions: interaction of H2O and O2 with the AlAs(001) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference41 articles.
1. Self‐terminating thermal oxidation of AlAs epilayers grown on GaAs by molecular beam epitaxy
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3. Wet oxidation of AlAs grown by molecular beam epitaxy
4. Photopumped room‐temperature continuous operation of native‐oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well‐heterostructure lasers
5. Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
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1. van der Waals heterostructures of AlAs and InSe: Stacking-dependent Raman spectra and electric field dependence of electronic properties;Applied Surface Science;2024-05
2. Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-09
3. The interaction of water with solid surfaces: fundamental aspects revisited;Surface Science Reports;2002-05
4. 3.8.2 H2O and OH on semiconductors - Text and Tables;Adsorbed Layers on Surfaces
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