Sulfur-adsorbed GaAs(001) surface studied by X-ray absorption near edge structure, X-ray standing waves and X-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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4. Universal Passivation Effect of (NH4)2SxTreatment on the Surface of III-V Compound Semiconductors
5. Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams
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1. Surface study of organopalladium molecules on S-terminated GaAs;physica status solidi (c);2010-12-02
2. Molecular Self-Assembly at Bare Semiconductor Surfaces: Characterization of a Homologous Series of n-Alkanethiolate Monolayers on GaAs(001);ACS Nano;2007-08-01
3. Adsorption processes of Se on the GaAs(111)A–(2x2) surface;Applied Surface Science;2000-08
4. Surface Chemistry of Prototypical Bulk II−VI and III−V Semiconductors and Implications for Chemical Sensing;Chemical Reviews;2000-06-09
5. STRUCTURE OF CHEMICALLY PREPARED PASSIVATION LAYERS ON SINGLE CRYSTAL SEMICONDUCTOR SURFACES;Surface Review and Letters;1999-12
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