Thermal-dependent unoccupied electronic structure of a C 60 monolayer film adsorbed on a Si( 111 )-(7×7) surface-Reference-Cited by-同舟云学术

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Thermal-dependent unoccupied electronic structure of a C 60 monolayer film adsorbed on a Si( 111 )-(7×7) surface

Published:2001-11 Issue:1-3 Volume:493 Page:604-609
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Sakamoto Kazuyuki,Kondo Daiyu,Takeda Hideo,Sato Takanori,Suga Shigemasa,Matsui Fumihiko,Amemiya Kenta,Ohta Toshiaki,Uchida Wakio,Kasuya Atsuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference23 articles.

1. Growth of silicon carbide films via C60 precursors

2. Surface structure of 3C‐SiC(111) grown on Si(111) surface by C60 precursor

3. SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor

4. Scanning Tunneling Microscopy of C60on the Si(111)7×7 Surface

5. Single-monolayer ordered phases ofC60molecules on Si(111)-(7×7) surfaces

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. C60 monolayer on semiconductors;Physics of Solid Surfaces;2018

2. Large area self-ordered parallel C60 molecular nanowire arrays on Si(110) surfaces;Carbon;2016-10

3. Interaction of C60with clean and hydrogenated SiC-(3×3) probed through the unoccupied electronic states;Physical Review B;2013-09-17

4. High-temperature desorption of C60covalently bound to6H-SiC(0001)-(3×3);Physical Review B;2011-08-16

5. Fullerene adsorption on semiconductor surfaces;Surface Science Reports;2010-07-15

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