Surface structure of 3C‐SiC(111) grown on Si(111) surface by C60 precursor-Reference-Cited by-同舟云学术

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Surface structure of 3C‐SiC(111) grown on Si(111) surface by C60 precursor

Published:1996-02-26 Issue:9 Volume:68 Page:1253-1255
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hu C.‐W.,Kasuya A.,Suto S.,Wawro A.,Nishina Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115943

Reference14 articles.

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A density functional theory study of CO methanation mechanism on Ni4/SiC catalyst;Computational Materials Science;2018-10

2. High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition;Journal of the American Ceramic Society;2017-10-23

3. Fabrication and Characterization of Beaded SiC Quantum Rings with Anomalous Red Spectral Shift;Advanced Materials;2012-08-22

4. Spray deposition and property analysis of anatase phase titania (TiO2) nanostructures;Thin Solid Films;2010-10

5. Effect of Different Si/C flux Ratios on the Growth of SiC on Si (111) by SSMBE;Journal of Inorganic Materials;2008-08-04

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