Irradiation-induced Ge multilayer growth from GeH4 on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM
2. Scanning tunneling microscopy (STM) studies of the chemical vapor deposition of Ge on Si(111) from Ge hydrides and a comparison with molecular beam epitaxy
3. The role of hydride coverage in surface‐limited thin‐film growth of epitaxial silicon and germanium
4. Si1−xGex alloy growth on Si(111) surfaces from gaseous hydride sources
5. Gas—surface reactivity in mixed-crystal systems: the reaction of GeH4 and Ge2H6 on Si surfaces
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Si x Ge 1-x ultrahigh-vacuum chemical vapor deposition on Si(111)(7×7) from GeH 4 /Si 2 H 6 mixtures;Applied Physics A: Materials Science & Processing;2003-03-01
2. Scanning Tunneling Microscopy (STM) and Spectroscopy (STS), Atomic Force Microscopy (AFM);High-Resolution Imaging and Spectrometry of Materials;2003
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