Ge(100)2×1 substoichiometric oxidation states promoted by a Cs overlayer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference31 articles.
1. Oxygen adsorption on a Ge(100) surface
2. Thermal growth ofSiO2-Si interfaces on a Si(111)7×7 surface modified by cesium
3. New aspects in the oxidation kinetics of alkali-metal promoted group IV and III-V semiconductor surfaces
4. Logarithmic exposure dependence in alkali-metal promoted oxidation of elemental semiconductors
5. Catalytic oxidation of the GaAs(110) surface promoted by a Cs overlayer
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1. Tailoring Intercalant Assemblies at the Graphene–Metal Interface;Langmuir;2019-01-21
2. Alkali metal adsorption on Ge(001)-c(2×4) surface: 0.25 monolayer of Na, K, Rb and Cs;Applied Surface Science;2014-05
3. Resonances in electron stimulated desorption yield of cesium atoms from germanium monolayer-covered tungsten;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-07
4. Adsorption geometry ofCu(111)−Csstudied by scanning tunneling microscopy;Physical Review B;2006-06-28
5. Electron stimulated desorption of cesium atoms from germanium-covered tungsten;Surface Science;2006-05
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