New aspects in the oxidation kinetics of alkali-metal promoted group IV and III-V semiconductor surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference48 articles.
1. Core‐level photoemission of the Cs‐O adlayer of NEA GaAs cathodes
2. Oxygen adsorption on Ge(111) surface
3. SiO2‐Si interface formation by catalytic oxidation using alkali metals and removal of the catalyst species
4. Electronic promoters and semiconductor oxidation: Alkali metals on Si(111) surfaces
5. Electronic properties of O_{2} on Cs or Na overlayers adsorbed on Si(100)21 from room temperature to 650°C
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1. The dependence of the oxidation enhancement of InP(100) surface on the coverage of the adsorbed Cs;Journal of Applied Physics;2010-06-15
2. Photoemission study of the effect of thermal annealing on Cs2O/Si(111) surfaces;Journal of Applied Physics;2001-10-15
3. Effect of gold on the oxidation of the Si(111)-7×7 surface;Surface Science;2001-07
4. Interaction of oxygen with a potassium-covered GaSb(110) surface at 500 K;Surface Science;1999-09
5. Alkali metal promoted oxidation of the Si(113) surface;Thin Solid Films;1999-03
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