Design of highly reliable radiation hardened 10T SRAM cell for low voltage applications-Reference-Cited by-同舟云学术

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Design of highly reliable radiation hardened 10T SRAM cell for low voltage applications

Published:2022-11 Issue: Volume:87 Page:176-181
ISSN:0167-9260
Container-title:Integration
language:en
Short-container-title:Integration

Author:

Shekhar Raghav,Kumar Chaudhry Indra^ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Reference19 articles.

1. Ultralow-power design in near-threshold region;Markovic,2010

2. Near-threshold computing: reclaiming Moore's law through energy efficient integrated circuits;Dreslinski,2010

3. A highly reliable and energy efficient radiation hardened 12T SRAM cell design;Kumar,2020

4. Soft error rate increase for new generations of SRAMs;Granlund,2003

5. Novel radiation-hardened-by-design (RHBD) 12T memory cell for aerospace applications in nanoscale CMOS technology;Guo,2017

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A robust radiation resistant SRAM cell for space and military applications;Integration;2024-05

2. Improved Stability for Robust and Low-Power SRAM Cell using FinFET Technology;Journal of Circuits, Systems and Computers;2023-10-28

3. Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications;Microsystem Technologies;2023-07-12

4. Low-power and high-speed SRAM cells for double-node-upset recovery;Integration;2023-07

5. Low-Power SRAM Cell and Array Structure in Aerospace Applications: Single-Event Upset Impact Analysis;Wireless Personal Communications;2022-10-15

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