A novel single-ended 9T FinFET sub-threshold SRAM cell with high operating margins and low write power for low voltage operations
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Software
Reference33 articles.
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3. ‘A 20nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process–voltage–temperature variations';Kushwah;Microelectron. J.,2016
4. ‘A proposed DG-FinFET based SRAM cell design with RadHard capabilities';Rathod;Microelectron. Reliab.,2010
5. ‘A single-ended with dynamic feedback control 8T Subthreshold SRAM cell’;Kushwah;IEEE Trans. Very Large Scale Integr. (VLSI) Syst.,2016
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