Highly stable soft-error immune SRAM with multi-node upset recovery for aerospace applications

Author:

Bai Na,Zhou Yueliang,Xu Yaohua,Wang Yi,Chen Zihan

Funder

Anhui University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Reference19 articles.

1. Variation tolerant differential 8T SRAM cell for ultralow power applications;Pal;IEEE Trans. Comput. Aided Des. Integrated Circ. Syst.,2016

2. Design of soft-error-aware SRAM with multi-node upset recovery for aerospace applications;Pal;IEEE Transactions on Circuits and Systems I: Regular Papers,2021

3. A 1.2 V, highly reliable RHBD 10T SRAM cell for aerospace application;Dohar;IEEE Trans. Electron. Dev.,2021

4. Design of a Sextuple Cross-Coupled SRAM Cell with Optimized Access Operations for Highly Reliable Terrestrial Applications;Yan,2019

5. Soft-error-aware SRAM for terrestrial applications;Prasad;IEEE Trans. Device Mater. Reliab.,2021

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1. Physical Insight into Single-Event Upsets of DICE Circuits and Hardening Strategy;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10

2. SEDONUT: A Single Event Double Node Upset Tolerant SRAM for Terrestrial Applications;ACM Transactions on Design Automation of Electronic Systems;2024-05-03

3. Design of an SRAM-bitcell with enhanced self-recoverability from soft errors for space and critical terrestrial applications;Integration;2024-05

4. A 14T Radiation Resistant Self-Recoverable SRAM Cell;2024 2nd International Conference on Device Intelligence, Computing and Communication Technologies (DICCT);2024-03-15

5. An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors;Microelectronics Reliability;2024-01

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