Introduction of a new technique for simultaneous reduction of the delay and leakage current in digital circuits

Author:

Mohammadian Hamed,Tavakolib Mohammad Bagher,Setoudeh FarbodORCID,Horri Ashkan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Reference24 articles.

1. An ultralow power subthreshold CMOS voltage reference without requiring resistors or BJTs;Liu;IEEE Trans. Very Large Scale Integr. Syst.,2018

2. Digital systems power management for high performance mixed signal platforms;Kapoor;IEEE Trans. Circuits Syst. I Regul. Pap.,2014

3. A new leakage- tolerant high speed comparator based domino gate for wide fan-in OR logic for low power VLSI circuits;Kumar;Integration,2018

4. Analysis of the impact of gate-body signal phase on DTMOS inverters in 0.13μm PD-SOI;Drake;IEEE Int. SOI Conf.,2003

5. 1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS;Mutoh;IEEE J. Solid State Circ.,1995

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1. A simultaneous area, delay and leakage current reduction method for Linear Feedback Shift Register (LFSR) using pulsed latches and DTMOS transistors;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2024-06

2. Power and Delay Analysis of a CMOS Inverter;2023 International Conference on Data Science and Network Security (ICDSNS);2023-07-28

3. A survey of leakage reduction techniques in CMOS digital circuits for nanoscale regime;Australian Journal of Electrical and Electronics Engineering;2021-08-22

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