Stress evolution due to medium-energy ion bombardment of silicon-Reference-Cited by-同舟云学术

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Stress evolution due to medium-energy ion bombardment of silicon

Published:2006-01 Issue:2 Volume:54 Page:483-491
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Kalyanasundaram N.,Moore M.C.,Freund J.B.,Johnson H.T.

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference72 articles.

1. Roughening and ripple instabilities on ion-bombarded Si

2. Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering

3. Strain effects in Ge surface cascades

4. Roughness Evolution of Ion Sputtered Rotating InP Surfaces: Pattern Formation and Scaling Laws

5. Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence

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1. Ion energy dependent initial damage and damage growth in Ar-implanted fused silica;Materials Today Communications;2024-06

2. Interfacial phase-change and geometry modify nanoscale pattern formation in irradiated thin films;Journal of Engineering Mathematics;2024-04-17

3. Wavelength determination of ion-induced ripples;Materials Letters;2024-03

4. Ion Beam-Assisted Deposition;Low-Energy Ion Irradiation of Materials;2022

5. Microstructural and Energy-Dispersive X-ray Analyses on Argon Ion Implantations in Tantalum Thin Films for Microelectronic Substrates;Electronics;2021-11-26

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