Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization-Reference-Cited by-同舟云学术

Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization

Published:2012-01 Issue:1 Volume:60 Page:51-58
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Chen Bin,Matsuhata Hirofumi,Sekiguchi Takashi,Ichinoseki Kyouichi,Okumura Hajime

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference39 articles.

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4. Silicon carbide benefits and advantages for power electronics circuits and systems

5. Electrical and structural investigation of triangular defects in 4H-SiC junction barrier Schottky devices

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