Extreme fast filling of conical shape through-silicon vias in 3 minutes and additive optimization

Author:

Hoang Van Ha,Kondo Kazuo

Funder

Tosetz Inc

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference20 articles.

1. Silicon interposers with integrated passive devices-an ultra-miniaturized solution for 3D integration;Bellenger;Chip Scale Review,2014

2. Reducing costs for TSV manufacturing;Cook,2008

3. High-Speed Through Silicon Via (TSV) Filling Using Diallylamine Additive;Hayashi;J. Electrochem. Soc.,2011

4. Five-Minute TSV Copper Electrodeposition;Kondo;J. Electrochem. Soc.,2014

5. Extreme Bottom-Up Superfilling of Through-Silicon-Vias by Damascene Processing: Suppressor Disruption, Positive Feedback and Turing Patterns;Moffat;J. Electrochem. Soc.,2012

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