Adsorption and Schottky Barrier Formation on Compound Semiconductor Surfaces-Reference-Cited by-同舟云学术

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Adsorption and Schottky Barrier Formation on Compound Semiconductor Surfaces

Published:1988 Issue: Volume: Page:119-181
ISSN:1571-0785
Container-title:Surface Properties of Electronic Materials - The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis
language:
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Author:

BRILLSON L.J.,MARGARITONDO G.

Publisher

Elsevier

Reference295 articles.

1. On the oxidation of III–V compound semiconductors

2. Oxygen interaction with GaAs surfaces: An XPS/UPS study

3. Species-specific densities of states of Ga and As in the chemisorption of oxygen on GaAs(110)

4. The oxidation of the GaAs (110) surface

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ZnO Schottky barriers and Ohmic contacts;Journal of Applied Physics;2011-06-15

2. Deep Levels and Band Bending at Metal-Semiconductor Interfaces;NATO ASI Series;1989

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