MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications-Reference-Cited by-同舟云学术

MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications

Published:2016-12 Issue: Volume:5 Page:209-214
ISSN:2352-9407
Container-title:Applied Materials Today
language:en
Short-container-title:Applied Materials Today

Author:

Nattermann L.,Ludewig P.,Knaub N.,Rosemann N.W.,Hepp T.,Sterzer E.,Jin S.R.,Hild K.,Chatterjee S.,Sweeney S.J.,Stolz W.,Volz K.

Funder

German Science Foundation

EPSRC

Publisher

Elsevier BV

Subject

General Materials Science

Reference23 articles.

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4. Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs;Usman;Phys. Rev. B,2011

5. Determination of band offsets in dilute bismide GaBixAs1−x quantum wells using polarization-resolved photovoltage spectroscopy and 12-band kp calculations;Broderick,2015

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