Artificial control of in-plane anisotropic photoelectricity in monolayer MoS2-Reference-Cited by-同舟云学术

Artificial control of in-plane anisotropic photoelectricity in monolayer MoS2

Published:2019-06 Issue: Volume:15 Page:203-211
ISSN:2352-9407
Container-title:Applied Materials Today
language:en
Short-container-title:Applied Materials Today

Author:

Tong Lei,Duan Xiaoyan,Song Luyao,Liu Tiande,Ye Lei,Huang Xinyu,Wang Peng,Sun Yuanhui,He Xin,Zhang Lijun,Xu Ke,Hu Weida,Xu Jian-Bin,Zang Jianfeng,Cheng Gary J.

Funder

National Natural Science Foundation of China

National Science Foundation

Research Grants Council of Hong Kong

Publisher

Elsevier BV

Subject

General Materials Science

Reference56 articles.

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3. Tightly bound trions in monolayer MoS2;Mak;Nat. Mater.,2012

4. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys. Rev. Lett.,2010

5. MoS2 transistors with 1-nanometer gate lengths;Desai;Science,2016

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